Semiconductor device, method for manufacturing semiconductor device and electronic apparatus
OwnerZilan LIinventor
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Abstract
The present disclosure provide a semiconductor device, a method for manufacturing a semiconductor device and an electronic apparatus. The device includes: a substrate; a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer, the first semiconductor layer having a smaller band gap than the second semiconductor layer; a first electrode and a third electrode formed on the first or second semiconductor layer; a second electrode formed on the second semiconductor layer, and a third semiconductor layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first semiconductor layer, provided on a first surface of the substrate;
- a second semiconductor layer, provided on a first surface of the first semiconductor layer,
- wherein the first semiconductor layer has a smaller band gap than the second semiconductor layer;
- a first electrode and a third electrode are provided on the first semiconductor layer or the second semiconductor layer, a second electrode is provided on the second semiconductor layer;
- and
- a third semiconductor layer, wherein a length range where the third semiconductor layer is projected onto the substrate is within a length range where the second electrode is projected onto the substrate, and the third semiconductor layer is a P-type semiconductor layer.
A method for manufacturing a semiconductor device, comprising:
- step S100:
- providing a substrate;
- step S200:
- forming a first semiconductor layer on a first surface of the substrate;
- step S300:
- forming a third semiconductor layer in the first semiconductor layer;
- and
- step S400:
- forming a second semiconductor layer on a first surface of the first semiconductor layer,
- wherein the first semiconductor layer has a smaller band gap than the second semiconductor layer, thus forming a two-dimensional charge carrier gas at an interface between the first semiconductor layer and the second semiconductor layer;
- and
- step S500:
- providing a first electrode and a third electrode in ohmic contact with the two-dimensional charge carrier gas, and providing a second electrode located at a first surface side of the second semiconductor layer,
- wherein a length range where the third semiconductor layer is projected onto the substrate is located within a length range where the second electrode is projected onto the substrate.
Dependencies are inferred from the claim text.