Compound semiconductor device

A compound semiconductor device comprising:

• a heterojunction bipolar transistor including a plurality of unit transistors;
• a capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the plurality of unit transistors;
• and
• a bump electrically connected to emitters of the plurality of unit transistors, wherein
• the plurality of unit transistors are arranged in a first direction,
• the bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction,
• the plurality of unit transistors include a first unit transistor and a second unit transistor, the emitter of the first unit transistor being disposed on a first side of a second direction with respect to a center line of the bump extending in the first direction, the emitter of the second unit transistor being disposed on a second side of the second direction with respect to the center line of the bump, the second direction being perpendicular to the first direction,
• the capacitor is not covered by the bump, and
• a length of the base wire connected to the first unit transistor is different from a length of the base wire connected to the second unit transistor.