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US 2021/0066468 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorsTakayuki BEPPU, Masayuki KITAMURA, Hiroshi TOYODA, Katsuaki NATORI
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Abstract
According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.
Claims20
A semiconductor device comprising:
- a plurality of insulating films adjacent to each other;
- and
- a conductive film provided between the plurality of insulating films, the conductive film including molybdenum having a grain diameter substantially the same as a thickness of the conductive film.
A semiconductor device comprising:
- a plurality of insulating films adjacent to each other;
- and
- a conductive film provided between the plurality of insulating films, the conductive film including molybdenum having a grain diameter substantially the same as a width between adjacent insulating films among the plurality of insulating films.
A manufacturing method of a semiconductor device, comprising:
- forming a stacked body in which a plurality of insulating films and a plurality of sacrificial films are alternately stacked on a substrate;
- forming a plurality of holes extending in a stacking direction of the stacked body in the stacked body;
- forming a charge trapping film, a tunnel insulating film, and a semiconductor pillar in this order on an inner wall of each of the plurality of holes;
- forming a slit extending in the stacking direction of the stacked body in the stacked body separate from the holes;
- removing the sacrificial films through the slit to form a space between the plurality of insulating films;
- forming a conductive film by embedding molybdenum via the slit in the space where the sacrificial films were formed;
- heat-treating the conductive film;
- and
- removing the molybdenum in the slit while leaving the conductive film in the space.
6 more elements
Dependencies are inferred from the claim text.