Scaled gate contact and source/drain cap
AssigneeGlobalfoundries Inc.
InventorsHui ZANG, Ruilong XIE, Jae Gon LEE
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AssigneeGlobalfoundries Inc.
InventorsHui ZANG, Ruilong XIE, Jae Gon LEE
Estimating the term…
The present disclosure relates to semiconductor structures and, more particularly, to a scaled gate contact and source/drain cap and methods of manufacture. The structure includes: a gate structure comprising an active region; source and drain contacts adjacent to the gate structure; a capping material over the source and drain contacts; a gate contact formed directly above the active region of the gate structure and over the capping material; a U-shape dielectric material around the gate contact, above the source and drain contacts; and a contact in direct electrical contact to the source and drain contacts.
A structure comprising:
A structure comprising:
A method comprising:
Dependencies are inferred from the claim text.