Memory device
AssigneeElectronics and Telecommunications Research Institute
InventorsJungWook LIM, Sun Jin YUN
Life of this patent
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Abstract
Provided is a memory device including a gate electrode, a first insulation layer on the gate electrode, a first conductive pattern and a second conductive pattern, which are spaced apart from each other on the first insulation layer, a channel pattern disposed on the first insulation layer to connect the first conductive pattern and the second conductive pattern, and an interface layer disposed between the channel pattern and the first insulation layer and having a hydrogen atom content ratio (atomic %) greater than that of the first insulation layer.
Claims10
A memory device comprising:
- a gate electrode;
- a first insulation layer on the gate electrode;
- a first conductive pattern and a second conductive pattern, which are spaced apart from each other on the first insulation layer;
- a channel pattern disposed on the first insulation layer to connect the first conductive pattern and the second conductive pattern;
- and
- an interface layer disposed between the channel pattern and the first insulation layer and having a hydrogen atom content ratio (atomic %) greater than that of the first insulation layer.
A memory device comprising:
- a first gate electrode and a second gate electrode, which are spaced apart from each other in a first direction;
- a first channel pattern on the first gate electrode;
- a second channel pattern on the second gate electrode;
- a first insulation layer disposed between the first gate electrode and the first channel pattern and between the second gate electrode and the second channel pattern;
- and
- a first conductive pattern and a second conductive pattern on the first insulating layer, wherein the first conductive pattern and the second conductive pattern are spaced apart from each other in a second direction crossing the first direction,
- wherein each of the first channel pattern and the second channel pattern connects the first conductive pattern and the second conductive pattern.
Dependencies are inferred from the claim text.