Transistors with varying width nanosheet

A fin field-effect transistor, comprising:

• a semiconductor substrate;
• at least one source region comprising semiconductor material doped to form an n-type region, the at least one source region having a height greater than a height of the semiconductor substrate;
• at least one drain region comprises semiconductor material doped to form a p-type region, the at least one drain region having a height greater than the height of the semiconductor substrate;
• at least one gate formed between the at least one source region and the at least one drain region, the at least one gate having a height greater than the height of the semiconductor substrate;
• and
• a nanosheet formed between the semiconductor substrate and the at least one gate, between the semiconductor substrate and the at least one source region, and between the semiconductor substrate and the at least one drain region,
• wherein the nanosheet has a first region with a first width under the at least one gate and a second region with a second width under the at least one source region and the at least one drain region, wherein the first width is different than the second width.

A semiconductor device comprising:

• a substrate;
• one or more source regions;
• one or more drain regions;
• one or more gates;
• and
• at least one nanosheet formed between the substrate and the one or more gates, the at least one nanosheet having a first width region and a second width region, the first width region being narrower than the second width region, the nanosheet being a two-dimensional material.