Plasma processing method
AssigneeHitachi High-Tech Corporation
InventorsYusuke Nagamitsu, Takeshi Shima, Takeshi Shimada, Hayato Watanabe
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Abstract
There is provided a plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method including: a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power; and an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, in which the trench forming step and the oxidizing step are repeated a plurality of times.
Claims11
A plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method comprising:
- a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power;
- and
- an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, wherein
- the trench forming step and the oxidation step are repeated a plurality of times.
Dependencies are inferred from the claim text.