Apparatus and method for treating substrate
AssigneeSemes Co., Ltd.
InventorsByungsun Bang, Youngil Lee
Life of this patent
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Abstract
The inventive concept relates to a method for treating a substrate. In an embodiment, a method for etching a substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatment liquid having a set temperature and a set concentration onto the substrate heated to a set temperature, in which a second treatment liquid is additionally dispensed for a set period of time in an overlapping manner while the first treatment liquid is dispensed in the silicon nitride layer etching process.
Claims20
An apparatus for treating a substrate, the apparatus comprising:
- a support unit configured to support the substrate and provided so as to be rotatable;
- a heater configured to heat the substrate;
- a first nozzle configured to dispense a first treatment liquid onto the substrate in a substrate treating process, the first treatment liquid being one of a phosphoric acid solution or a mixture of a phosphoric acid solution and a silicon-based chemical;
- and
- a second nozzle configured to dispense a second treatment liquid onto the substrate in the substrate treating process, the second treatment liquid being one of a phosphoric acid solution or a mixture of a phosphoric acid solution and a silicon-based chemical.
An apparatus for treating a substrate, the apparatus comprising:
- a support unit configured to support the substrate and provided so as to be rotatable;
- a heater configured to heat the substrate;
- a first nozzle configured to dispense a first treatment liquid onto the substrate in a substrate treating process, the first treatment liquid being one of a phosphoric acid solution or a mixture of a phosphoric acid solution and a silicon-based chemical;
- a second nozzle configured to dispense a second treatment liquid onto the substrate in the substrate treating process, the second treatment liquid being one of a phosphoric acid solution or a mixture of a phosphoric acid solution and a silicon-based chemical;
- a third nozzle configured to dispense a third treatment liquid onto the substrate in the substrate treating process, the third treatment liquid being a silicon-based chemical;
- a temperature sensor configured to measure temperatures of respective regions of the substrate;
- and
- a controller,
- wherein the concentration of silicon (Si) contained in the third treatment liquid is higher than the concentration of silicon (Si) contained in the first treatment liquid and the second treatment liquid,
- wherein the controller controls at least one of a dispensing position, dispensing time, and a dispensing flow rate of at least one of the first nozzle and the second nozzle, based on a temperature measurement result of the temperature sensor,
- wherein a dispensing position of the second treatment liquid corresponds to a region, the temperature of which is measured to be high in a process of treating a first substrate, and
- wherein dispensing time of the second treatment liquid ranges from any time point when temperature starts to rise in a process of treating the first substrate to any time point before the temperature falls.
Dependencies are inferred from the claim text.