EUV Photoresist With Low-Activation-Energy Ligands or High-Developer-Solubility Ligands

A photoresist, comprising:

• a core group that contains metal;
• and
• a first ligand or a second ligand attached to the core group;
• wherein:
• the first ligand has one of the following chemical formulas:
• the second ligand has one of the following chemical formulas:
• wherein the photoresist is an extreme ultraviolet (EUV) photoresist.

A method, comprising:

• coating a photoresist material over a substrate, the photoresist material containing a core group and one or more first ligands or one or more second ligands attached to the core group;
• and
• performing an extreme ultraviolet (EUV) lithography process using the photoresist material;
• wherein:
• the core group contains metal;
• a chemical structure of the first ligands includes:
• a chemical structure of the second ligands includes:
• represents the core group;
• L′ represents a chemical that includes 0˜2 carbon atoms saturated by Hydrogen (H) or Fluorine (F);
• L represents a chemical that includes 1˜6 carbon atoms saturated by H or F;
• L″ represents a chemical that includes 1˜6 carbon atoms saturated by H;
• L′″ represents a chemical that includes 1˜6 carbon atoms saturated by H or F;
• and
• linker represents a chemical that links L″ and L′″ together.