Photomask with enhanced contamination control and method of forming the same

A photomask, comprising:

• a substrate;
• a first absorption layer over the substrate;
• a multilayer stack disposed over the first absorption layer and comprising alternating molybdenum layers and silicon layers;
• a capping layer over the multilayer stack;
• a second absorption layer over the capping layer;
• and
• a trench extending through the first absorption layer, the capping layer and the multilayer stack and exposing a portion of the second absorption layer.

A method of forming a photomask, the method comprising:

• depositing a first absorption layer over a substrate;
• forming a multilayer stack over the first absorption layer, the multilayer stack being configured to reflect a radiation beam;
• depositing a capping layer over the multilayer stack;
• depositing a second absorption layer over the capping layer;
• and
• etching the second absorption layer to form a first pattern and a second pattern, wherein the first pattern is to be transferred to a workpiece during a photolithography operation, and wherein the second pattern is configured as a non-printable feature for the workpiece.