US 2021/0063500 A1 · TMR Sensor with Magnetic Tunnel Junctions with a Free Layer Having an Intrinsic Anisotropy

Abstract

Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.

Claims20

Dependent claims

A tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration, comprising:

at least one magnetic tunnel junction (MTJ), the at least one MTJ comprising:
a free layer deposited at a high oblique angle from normal, the free layer having an intrinsic anisotropy.

Dependencies are inferred from the claim text.

Facts

Application

16/728,514Filed 27 Dec 2019

Priority

27 Aug 2019

Published

4 Mar 2021

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

G01R 33/096
Magnetoresistive devices: anisotropic magnetoresistance sensors
B82Y 25/00
Nanomagnetism
G01R 33/0052
Arrangements or instruments for measuring magnetic variables: manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor…
G01R 33/093
Magnetoresistive devices: using multilayer structures, e.g. giant magnetoresistance sensors

TMR Sensor with Magnetic Tunnel Junctions with a Free Layer Having an Intrinsic Anisotropy

Life of this patent

TMR Sensor with Magnetic Tunnel Junctions with a Free Layer Having an Intrinsic Anisotropy

Life of this patent

Abstract

Claims20