Optimized growth of stable hybrid perovskite materials for electromagnetic and particle radiation detection

An inverse temperature crystallization process for forming a single crystal perovskite, the process comprising:

• introducing a precursor solution of a single crystal perovskite material having a composition represented by formula ABX3 into a crystallization chamber, wherein the precursor solution comprises a solvent and one or more compounds comprising atoms that form A, B, and X in the single crystal perovskite material, wherein A is at least one organic cation having a +1 or +2 charge, B is at least one inorganic cation having a +2 or +4 charge, and X is at least one anion having a −1 or −2 charge;
• heating the precursor solution to a pre-nucleation temperature;
• heating the precursor solution to a nucleation temperature that is at least about 2° C. above the pre-nucleation temperature to form a plurality of seed crystals;
• and
• growing the single crystal perovskite material by lowering a temperature of the precursor solution to a crystal growth temperature below the nucleation temperature, wherein the single crystal perovskite material has a volume of greater than or equal to about 1 mm3.

A crystallization chamber for an inverse temperature crystallization process to form a single crystal perovskite, the crystallization chamber comprising:

• a first plate and a second plate disposed in parallel to one another, wherein the first plate defines an internal surface near which the single crystal perovskite can grow;
• a spacer disposed between the first plate and the second plate that defines a sealed internal volume between the first plate and the second plate that contains at least one seed crystal of the single crystal perovskite;
• a reservoir containing a precursor solution of the single crystal perovskite having a composition represented by formula ABX3 into a crystallization chamber, wherein the precursor solution comprises a solvent and one or more compounds comprising atoms that form A, B, and X in the single crystal perovskite, wherein A is at least one organic cation having a +1 or +2 charge, B is at least one inorganic cation having a +2 or +4 charge, and X is at least one anion having a −1 or −2 charge;
• an inlet in fluid communication with the internal volume configured to receive the precursor solution from the reservoir;
• an outlet in fluid communication with the internal volume through which the precursor solution can flow;
• a pump configured to pump the precursor solution from the inlet across the seed crystal in the internal volume to the outlet;
• and
• at least one heater for heating the precursor solution to a predetermined temperature for growth of the single crystal perovskite material in the internal volume.