Low-K Films

A method of depositing a film, the method comprising:

• exposing a substrate to a silicon precursor of general formula I or general formula II
• wherein X is silicon (Si) or carbon, Y is carbon (C) or oxygen (O), R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide to deposit a silicon-containing film on the substrate;
• and
• exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate.

A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:

• flow a silicon precursor into a processing volume of the processing chamber having a substrate, the silicon precursor having general formula (I) or general formula (II)
• wherein X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R1, R2, R3, R4, R5, R6, R7, and R9 are independently selected from hydrogen (H), substituted or unsubstituted alkyl alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide;
• purge the processing chamber of the silicon precursor;
• expose the substrate to an oxidant;
• purge the processing chamber of the oxidant;
• expose the substrate to a plasma;
• and
• purge the processing chamber.