Process for manufacturing a silicon carbide coated body
AssigneeApplied Materials, Inc.
InventorsPeter J. GUERCIO, Paul WESTPHAL
Life of this patent
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Abstract
The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.
Claims20
A method of manufacturing a purified graphite member and modifying surface porosity thereof, comprising:
- providing a porous graphite member having an open porosity and comprising pores with an initial average pore diameter in a range of 0.4-5.0 μm and comprising pores with an initial surface pore diameter of <10 μm, and having an initial average grain size of <0.05 mm;
- locating the porous graphite member in a furnace and flowing nitrogen in the furnace until an oxygen content in the furnace is about 5.0%;
- heating the porous graphite member in the furnace to a temperature of at least about 1000° C.;
- continuing flowing nitrogen and heating the porous graphite member until the oxygen content in the furnace is less than or equal to 0.5%;
- directly subjecting the porous graphite member to a chlorination treatment by increasing the temperature of the furnace to >1500° C. and starting flowing chlorine gas;
- and
- heating the porous graphite member in the chlorine gas in the furnace to a temperature of greater than or equal to 1700° C. to form the purified graphite member.
A porous graphite member having a purity of greater than or equal to 98%, wherein the porous graphite member is manufactured by:
- providing a graphite member having an open porosity and comprising pores with an initial average pore diameter in a range of 0.4-5.0 μm and comprising pores with an initial surface pore diameter of <10 μm, and having an initial average grain size of <0.05 mm;
- locating the graphite member in a furnace and flowing nitrogen in the furnace until an oxygen content in the furnace is about 5.0%;
- heating the porous graphite member in the furnace to a temperature of at least about 1000° C.;
- continuing flowing nitrogen and heating of the porous graphite member until the oxygen content in the furnace is less than or equal to 0.5%;
- directly subjecting the porous graphite member to a chlorination treatment, by increasing the temperature of the furnace to >1500° C. and starting flowing chlorine gas;
- and
- heating the porous graphite member in the chlorine gas in the furnace to a temperature of greater than or equal to 1700° C.
A porous graphite semiconductor processing chamber component, comprising:
- a porous graphite base having:
- a plurality of modified pores therein, at least a portion of the plurality of modified pores opening at an outer surface of the porous graphite base and having a diameter of at least 10 μm at the outer surface of the porous graphite base;
- and
- a chlorine content of between 20.00 ppb by weight to 60.00 ppb by weight;
- and
- a silicon carbide coating extending on the outer surface of the porous graphite base, the silicon carbide coating extending inwardly of the pores of the porous graphite base.
Dependencies are inferred from the claim text.