Light emitting diode device and manufacturing method thereof

A light emitting diode (LED) device comprising:

• a first semiconductor layer of a first type;
• a second semiconductor layer of a second type different from the first type;
• a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light based on a difference between a voltage applied to the first semiconductor layer and a voltage applied to the second semiconductor layer;
• and
• a filter formed on the second semiconductor layer and configured to transmit light in a second wavelength band within a first wavelength band,
• wherein the filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of each of the first refractive layers, respectively,
• wherein the first refractive layers and the second refractive layers are formed alternately with each other on one side and other side of the defect layer, and
• wherein the defect layer is formed in a thickness based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.