US 2021/0005731 A1Published application

Silicene electronic device

AssigneeSamsung Electronics Co., Ltd.

InventorsYoungtek OH, Jinwook JUNG, Hyeokshin KWON, Wontaek SEO, Insu JEON

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Abstract

A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

Claims18

Dependent claims

A silicene electronic device comprising:

a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises a low doping concentration region lowly doped with at least one of p-type dopant or an n-type dopant, and a high doping concentration region highly doped with at least one of p-type dopant or an n-type dopant;
and
an electrode material layer formed on the high doping concentration region,
wherein the silicene material layer comprises a first region formed as a single layer or a bi-layer and a second region formed as a multilayer, and the highly doped region may be formed in the second region.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 17/028,205Filed 22 Sep 2020
Priority: KR 10-2018-012853425 Oct 2018
Published: 7 Jan 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 62/882
Being a two-dimensional material: graphene
H10D 64/62
Electrodes characterised by their materials: electrodes ohmically coupled to a semiconductor
H10D 30/481
Having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]: fETs having…
H10D 30/6741
Characterised by the active materials: group IV materials, e.g. germanium or silicon carbide

Family

Application16/356,378Continuation · filed 18 Mar 2019
Application17/028,205Continuation
US 10,818,765 B2Related patent
US 11,245,021 B2Related patent
US 2020/0135878 A1Published application
US 2021/0005731 A1This patent

From the US filing history. Foreign family members aren’t listed.

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