Electronic devices comprising crystalline materials and related memory devices and systems

A system, comprising:

• memory including memory cells comprising at least one vertical thin-film transistor, the at least one vertical thin-film transistor comprising:
• pillars, each pillar comprising a portion of a first material and a portion of a second material over and in contact with the portion of the first material, wherein each of the first material and the second material comprise at least one element selected from the group consisting of silicon and germanium, and wherein the second material exhibits a composition different than a composition of the first material;
• wherein each pillar is laterally isolated from each adjacent pillar, and wherein the portion of the first material in each pillar is in single crystalline form;
• and
• a processor in operative communication with at least one input device, at least one output device, and the memory.