Radio-frequency switch with voltage equalization

A radio-frequency switch comprising:

• a first series switch comprising a plurality of series field-effect transistors (FETs) connected in series between a first terminal and either a second terminal or a common node;
• a first shunt switch comprising a plurality of shunt FETs connected in series between the first terminal and a first ground terminal;
• and
• a first shunt gate resistor circuit comprising:
• a plurality of gate resistors respectively connected between gates of the plurality of shunt FETs of the first shunt switch and a common connection node of the plurality of gate resistors of the first shunt gate resistor circuit;
• and
• a common gate resistor connected between the common connection node of the plurality of gate resistors of the first shunt gate resistor circuit and a first shunt gate voltage terminal,
• wherein a position of a gate resistor located at a center of the plurality of gate resistors of the first shunt gate resistor circuit is designated as a first reference position in response to a total number of the plurality of gate resistors of the first shunt gate resistor circuit being an odd number, and a center point located at the center of the plurality of gate resistors of the first shunt gate resistor circuit is designated as the first reference position in response to the total number of the plurality of gate resistors of the first shunt gate resistor circuit being an even number,
• respective resistance values of gate resistors located on a first terminal side of the first reference position among the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first reference position toward the first terminal, and
• respective resistance values of gate resistors located on a first ground terminal side of the first reference position among the plurality of gate resistors of the first shunt gate resistor circuit successively increase in a direction away from the first reference position toward the first ground terminal.

A radio-frequency switch comprising:

• a series switch comprising a plurality of series field-effect transistors (FETs) connected in a series connection between a first terminal and either a second terminal or a common node;
• a shunt switch comprising a plurality of shunt FETs connected in a series connection between the first terminal and a first ground terminal;
• and
• a shunt gate resistor circuit comprising a plurality of gate resistors respectively connected between gates of the plurality of shunt FETs of the shunt switch and a shunt gate voltage terminal,
• wherein a respective resistance value of each gate resistor among the plurality of gate resistors depends on a total number of the plurality of shunt FETs, and a position of a corresponding shunt FET to which the gate resistor is connected among the plurality of shunt FETs in the series connection of the plurality of shunt FETs between the first terminal and the first ground terminal.

A radio-frequency switch comprising:

• a series switch comprising a plurality of series field-effect transistors (FETs) connected in a series connection between a first terminal and either a second terminal or a common node;
• a shunt switch comprising a plurality of shunt FETs connected in a series connection between the first terminal and a first ground terminal;
• and
• a shunt gate resistor circuit comprising:
• a plurality of gate resistors respectively connected between gates of the plurality of shunt FETs and a common connection node of the plurality of gate resistors;
• and
• a common gate resistor connected between the common connection node of the plurality of gate resistors and a shunt gate voltage terminal,
• wherein a position of a gate resistor located at a center of the plurality of gate resistors is designated as a first reference position in response to a total number of the plurality of gate resistors being an odd number, and a center point located at the center of the plurality of gate resistors is designated as the first reference position in response to the total number of the plurality of gate resistors being an even number,
• a respective resistance value of each gate resistor located on a first terminal side of the first reference position among the plurality of gate resistors depends on a total number of shunt FETs connected in series on the first terminal side of the first reference position among the plurality of shunt FETs connected in the series connection between the first terminal and the first ground terminal, and a position of a corresponding shunt FET to which the gate resistor located on the first terminal side of the first reference position is connected among the shunt FETs connected in series on the first terminal side of the first reference position, and
• a respective resistance value of each gate resistor located on a first ground terminal side of the first reference position among the plurality of gate resistors depends on a total number of shunt FETs connected in series on the first ground terminal side of the first reference position among the plurality of shunt FETs connected in the series connection between the first terminal and the first ground terminal, and a position of a corresponding shunt FET to which the gate resistor located on the first ground terminal side of the first reference position is connected among the shunt FETs connected in series on the first ground terminal side of the first reference position.