High-frequency amplifier circuitry
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsToshiki Seshita, Yasuhiko Kuriyama
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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsToshiki Seshita, Yasuhiko Kuriyama
Estimating the term…
A high-frequency amplifier circuitry includes a capacitor, a first transistor, a second transistor, and an ESD. The capacitor has one end connected to an input node. The first transistor has a gate connected to another end of the capacitor, and has a source grounded via an inductor. The second transistor is cascode-connected with the first transistor, has a gate grounded in a high-frequency manner, and outputs from a drain thereof a signal made by amplifying a signal output from a drain of the first transistor. The ESD protection circuitry includes a plurality of PN junction diodes, has a first terminal connected to the input node, has a second terminal grounded, and has a third terminal connected to the source of the first transistor.
A high-frequency amplifier circuitry comprising:
Dependencies are inferred from the claim text.