Integrated multiple-path power amplifier

Abstract

A multiple-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peaking amplifier FET), a combining node, and a shunt-inductance circuit. The first and second amplifiers and the combining node structure are integrally-formed with a semiconductor die, and the shunt-inductance circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt-inductance circuit is electrically coupled between the combining node structure and a ground reference node. The shunt-inductance circuit includes a shunt inductance (e.g., including wirebond(s) and/or spiral inductor(s)) that is integrated with the semiconductor die. The multiple-path amplifier also may include an integrated phase shifter/impedance inverter coupled between the outputs of the first and second transistors, and which is configured to impart a 90-degree phase delay between intrinsic drains of the first and second transistors.

Dependencies are inferred from the claim text.