Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device

A QD light emitting display device, comprising:

• a substrate;
• a QD light emitting diode positioned on or over the substrate, the QD light emitting diode including:
• a first electrode;
• a second electrode facing the first electrode;
• a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material;
• a hole auxiliary layer positioned between the first electrode and the QD emitting material layer;
• and
• an electron auxiliary layer positioned between the QD emitting material layer and the second electrode;
• and
• a thin film transistor positioned between the substrate and the QD light emitting diode and connected to the QD light emitting diode,
• wherein the organic material has a HOMO level higher than a material of the hole auxiliary layer.

A method of fabricating a QD light emitting diode, comprising:

• forming a first electrode;
• forming a hole auxiliary layer of a hole auxiliary material on the first electrode;
• forming a QD emitting material layer on the hole auxiliary layer by coating an emitting material solution, wherein the emitting material solution includes a QD, an organic material and a solvent;
• forming an electron auxiliary layer on the QD emitting material layer;
• and
• forming a second electrode on the electron auxiliary layer,
• wherein the organic material has a HOMO level higher than the hole auxiliary material.