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US 2020/0403156 A1Published application
Memory devices and methods for forming the same
AssigneeWinbond Electronics Corp.
InventorShun-Li LAN
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Abstract
A method of forming a memory device includes forming a first electrode; forming a resistive switching layer over the first electrode; forming a dielectric layer over the resistive switching layer; forming a first opening in the dielectric layer, wherein the first opening passes through the dielectric layer and exposes the resistive switching layer; forming a first trench in the dielectric layer, wherein the first trench is directly above the first opening; and forming a second electrode having a step shape in the first opening and the first trench.
Claims20
A method of forming memory devices, comprising:
- forming a first electrode;
- forming a resistive switching layer over the first electrode;
- forming a dielectric layer over the resistive switching layer;
- forming a first opening in the dielectric layer, wherein the first opening passes through the dielectric layer and exposes the resistive switching layer;
- forming a first trench in the dielectric layer, wherein the first trench is directly above the first opening;
- and
- forming a second electrode having a step shape in the first opening and the first trench.
4 more elements
A memory device, comprising:
- a first electrode;
- a resistive switching layer disposed over the first electrode;
- and
- a second electrode disposed over the resistive switching layer and having a step shape, wherein a bottom surface of the second electrode is smaller than a top surface of the resistive switching layer.
1 more element
Dependencies are inferred from the claim text.