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US 2020/0403154 A1Published application
Memory cell comprising a phase-change material
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorOlivier HINSINGER
Life of this patent
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Abstract
A memory cell includes a heating element topped with a phase-change material. Two first silicon oxide regions laterally surround the heating element along a first direction. Two second silicon oxide regions laterally surround the heating element along a second direction orthogonal to the first direction. Top surfaces of the heating element and the two first silicon oxide regions are coplanar such that the heating element and the two first silicon oxide regions have a same thickness.
Claims15
A memory cell, comprising:
- an insulating layer over a transistor;
- a conductor extending through the insulating layer and in electrical connection with a terminal of the transistor;
- a silicon oxide layer on the conductor and insulating layer, said silicon oxide layer including a first sidewall aligned with the conductor and having a thickness;
- a first silicon nitride spacer on the first sidewall and having a second sidewall, said first silicon nitride spacer having a thickness equal to the thickness of the silicon oxide layer;
- a heating element on the second sidewall and having a third sidewall, said heating element have a height equal to the thicknesses of the silicon oxide layer and the first silicon nitride spacer;
- a second silicon nitride spacer on the third sidewall and having a fourth sidewall;
- and
- a third silicon nitride spacer on the fourth sidewall and having a fifth sidewall in contact with the silicon oxide layer.
5 more elements
A method of manufacturing a memory cell, comprising:
- a) forming a first layer made of a silicon oxide material;
- b) etching the first layer across its entire thickness to leave in place a portion of the first layer;
- c) forming a second layer made of a heating element material, the second layer covering at least a side of the portion of the first layer left in place at step b);
- d) etching the second layer to leaving in place a portion of the second layer that covers said side;
- e) forming, in an area left after etching at step b), a third layer made of a silicon oxide material having a thickness greater than or equal to a thickness of the first layer so as to produce a structure;
- f) defining a heating element from a portion of the second layer, by etching to remove portions of said structure which surround the heating element;
- and
- g) forming, in an area left after etching at step f), a fourth silicon oxide layer having a thickness greater than or equal to that of the first silicon oxide layer.
5 more elements
Dependencies are inferred from the claim text.