Mram structure and method of fabricating the same

5:

• The MRAM structure of claim 1, further comprising:
• a bottom electrode contact plug disposed under the bottom electrode and contacting the bottom electrode;
• and
• a first conductive line disposed at one side of the MRAM, wherein a top surface of the first conductive line is aligned with a top surface of the top electrode upper portion, and a bottom of the first conductive line is aligned with a bottom of the bottom electrode contact plug.

8:

• A method of fabricating a magnetoresistive random access memory (MRAM) structure comprising:
• providing a first dielectric layer;
• forming a bottom electrode material layer covering the first dielectric layer;
• forming a magnetic tunnel junction (MTJ) composite layer covering the bottom electrode material layer;
• forming a first top electrode material layer covering the MTJ composite layer;
• patterning the first top electrode material layer, the MTJ composite layer and bottom electrode material layer to form a top electrode lower portion, an MTJ and a bottom electrode;
• forming a second dielectric layer covering the first dielectric layer, wherein a top surface of the second dielectric layer is aligned with a top surface of the top electrode lower portion;
• forming a second top electrode material layer covering the second dielectric layer;
• and
• patterning the second top electrode material layer to form a top electrode upper portion, wherein the top electrode upper portion connects to the top electrode lower portion, the top electrode upper portion and the top electrode lower portion form a top electrode, a width of the top electrode upper portion is larger than a width of the top electrode lower portion, and the top electrode, the MTJ and the bottom electrode form an MRAM.

9:

• The method of fabricating an MRAM structure of claim 8, further comprising:
• before forming the bottom electrode material layer, forming a bottom electrode contact plug embedded in the first dielectric layer, wherein the bottom electrode contact plug is under the bottom electrode and contacts the bottom electrode;
• and
• after forming the MRAM, forming a first conductive line at one side of the MRAM, wherein a top surface of the first conductive line is aligned with a top surface of the top electrode upper portion, and a bottom of the first conductive line is aligned with a bottom of the bottom electrode contact plug.

11:

• The method of fabricating an MRAM structure of claim 8, further comprising:
• forming the top electrode lower portion by using a photo mask to define a position of the top electrode lower portion;
• and
• forming the top electrode upper portion by using the photo mask to define a position of the top electrode upper portion, wherein exposure references are different when forming the top electrode lower portion and forming the top electrode upper portion so as to make the width of the top electrode upper portion and the width of the top electrode lower portion different from each other.

12:

• The method of fabricating an MRAM structure of claim 11, wherein the steps of patterning the first top electrode material layer, the MTJ composite layer and the bottom electrode material layer comprises:
• defining the position of the top electrode lower portion by the photo mask;
• patterning the first top electrode material layer to form the top electrode lower portion;
• and
• patterning the MTJ composite layer and the bottom electrode material layer by taking the top electrode lower portion as a mask to form the MTJ and the bottom electrode.