Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using an Oxidation Control Layer and Magnetic Moment Tuning Layer for Spintronic Applications

A perpendicular magnetic tunnel junction (p-MTJ), comprising:

• (a) a tunnel barrier layer that is a first metal oxide layer;
• (b) a Hk enhancing layer that is a second metal oxide layer or a metal oxynitride layer;
• (c) a free layer (FL) with a first surface that forms a first interface with the tunnel barrier layer, a second surface that forms a second interface with the Hk enhancing layer, and comprised of an oxidation control layer (OCL) material that getters oxygen, and a magnetic moment tuning layer (MMTL) material wherein the OCL and MMTL materials are separated by at least a portion of the FL;
• and
• (d) a capping layer.

A method of forming a perpendicular magnetic tunnel junction (p-MTJ) having a first interface between a free layer (FL) and a first oxide layer that is a tunnel barrier layer, and a second interface between the FL and a Hk enhancing layer that is a second metal oxide layer or a metal oxynitride layer, comprising:

• (a) forming the FL on the tunnel barrier layer with a sputter deposition sequence, comprising;
• (1) depositing a first FL sub-layer (FL1) on the tunnel barrier layer;
• (2) depositing one of an oxidation control layer (OCL) material that getters oxygen, and a magnetic moment tuning layer (MMTL) material on the FL1;
• (3) depositing the other of the OCL material and the MMTL material;
• and
• (4) depositing an uppermost FL sub-layer on the other of the OCL material and the MMTL material;
• (b) depositing a metal layer on the uppermost FL sub-layer;
• and
• (c) performing an oxidation or oxynitridation of the metal layer to yield the Hk enhancing layer.

A method of forming a perpendicular magnetic tunnel junction (p-MTJ) having a first interface between a free layer (FL) and a first oxide layer that is a tunnel barrier layer, and a second interface between the FL and a Hk enhancing layer that is a second metal oxide layer or a metal oxynitride layer, comprising:

• (a) forming the FL on the tunnel barrier layer with a sputter deposition sequence, comprising;
• (1) co-depositing an oxidation control layer (OCL) material that getters oxygen, and a first FL sub-layer (FL1) on the tunnel barrier layer;
• (2) depositing a magnetic moment tuning layer (MMTL) material on the co-deposited FL1 and OCL material;
• and
• (3) co-depositing the OCL material and a second FL sub-layer (FL2) on the MMTL material;
• (b) depositing a metal layer on the co-deposited FL2 and OCL material;
• and
• (c) performing an oxidation or oxynitridation of the metal layer to yield the Hk enhancing layer.

A method of forming a perpendicular magnetic tunnel junction (p-MTJ) having a first interface between a free layer (FL) and a first oxide layer that is a tunnel barrier layer, and a second interface between the FL and a Hk enhancing layer that is a second metal oxide layer or a metal oxynitride layer, comprising:

• (a) forming the FL on the tunnel barrier layer with a sputter deposition sequence, comprising;
• (1) co-depositing an oxidation control layer (OCL) material that getters oxygen, and a magnetic moment tuning layer (MMTL) material with a first FL sub-layer (FL1) on the tunnel barrier layer;
• (2) depositing the OCL material on the co-deposited FL1 and OCL and MMTL materials;
• and
• (3) co-depositing the OCL and MMTL materials with a second FL sub-layer (FL2) on the OCL material;
• (b) depositing a metal layer on the co-deposited FL2 and OCL and MMTL materials;
• and
• (c) performing an oxidation or oxynitridation of the metal layer to yield the Hk enhancing layer.

A method of forming a perpendicular magnetic tunnel junction (p-MTJ) having a first interface between a free layer (FL) and a first oxide layer that is a tunnel barrier layer, and a second interface between the FL and a Hk enhancing layer that is a second metal oxide layer or a metal oxynitride layer, comprising:

• (a) forming the FL on the tunnel barrier layer with a sputter deposition sequence, comprising;
• (1) depositing a first FL sub-layer (FL1) on the tunnel barrier layer;
• (2) depositing an oxidation control layer (OCL) material that getters oxygen, on the FL1;
• and
• (3) forming a second FL sub-layer (FL2) on the OCL material wherein the FL2 comprises a magnetic moment tuning layer (MMTL) material;
• and
• (b) depositing a metal layer on the FL2;
• and
• (c) performing an oxidation or oxynitridation of the metal layer to yield the Hk enhancing layer.