Indium gallium nitride red light emitting diode and method of making thereof

A nanowire red-light emitting diode, comprising:

• an n-doped nanowire core portion;
• a p-doped portion;
• and
• a light emitting shell located on the n-doped nanowire core under the p-doped portion, the light emitting shell comprising:
• a light-emitting indium gallium nitride shell emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross;
• a III-nitride shell located on the light-emitting indium gallium nitride shell;
• and
• a GaN barrier shell located on the III-nitride shell.

A method of manufacturing a direct view display device, comprising:

• providing first light emitting diodes, wherein each of the first light emitting diodes comprises an epitaxial material layer stack configured to emit light at a first peak wavelength in a range from 600 nm to 750 nm, wherein the epitaxial material layer stack comprises, from one side to another:
• a single crystalline n-doped GaN portion,
• at least one strain-modulating layer located on the single crystalline n-doped GaN layer,
• a light-emitting indium gallium nitride layer located on the plurality of strain-modulating layer stacks and emitting light at the first peak wavelength under electrical bias thereacross,
• a GaN barrier layer, and
• a p-doped aluminum gallium nitride layer;
• providing second light emitting diodes configured to emit light at a second peak wavelength in a range from 400 nm to 600 nm;
• and
• bonding the first light emitting diodes and the second light emitting diodes to a backplane to form an array of pixels.