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US 2020/0403117 A1Published application
Process flow for hybrid tft-based micro display projector
AssigneeFacebook Technologies, LLC
InventorsChloe Astrid Marie Fabien, Michael Grundmann
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Abstract
Disclosed herein are techniques for forming a thin-film circuit layer on an array of light-emitting diodes (LEDs). LEDs in the array of LEDs can be singulated by various processes, such as etching and ion implantation. Singulating LEDs can be performed before or after forming the thin-film circuit layer on the array of LEDs. The array of LEDs can be bonded to a transparent or non-transparent substrate.
Claims23
A method comprising:
- obtaining an epitaxial structure, wherein the epitaxial structure is a layered structure including a first doped semiconductor layer, a second doped semiconductor layer, and a light-emitting layer between the first doped semiconductor layer and the second doped semiconductor layer;
- isolating portions of the first doped semiconductor layer, isolating portions of the second doped semiconductor layer, or isolating portions of both the first doped semiconductor layer and the second doped semiconductor layer for forming a plurality of light emitting diodes (LEDs);
- depositing a thin-film circuit layer to the epitaxial structure, wherein the thin-film circuit layer comprises:
- a first thin-film layer, wherein the first thin-film layer comprises a plurality of transistors;
- and
- a second thin-film layer, wherein the second thin-film layer comprises interconnects for the plurality of transistors;
- and
- bonding the thin-film circuit layer to a backplane.
5 more elements
A method comprising:
- obtaining an epitaxial structure, wherein the epitaxial structure is a layered structure including a first doped semiconductor layer, a second doped semiconductor layer, and a light-emitting layer between the first doped semiconductor layer and the second doped semiconductor layer;
- applying a thin-film circuit layer to the epitaxial structure;
- isolating portions of the first doped semiconductor layer, isolating portions of the second doped semiconductor layer, or isolating portions of both the first doped semiconductor layer and the second doped semiconductor layer for forming a plurality of light emitting diodes (LEDs);
- bonding the thin-film circuit layer to a transparent substrate after applying the thin-film circuit layer to the epitaxial structure;
- and
- bonding a backplane to the transparent substrate, wherein:
- the backplane is electrically coupled with the thin-film circuit layer;
- and
- the thin-film circuit layer and the backplane are on a same side of the transparent substrate.
6 more elements
An apparatus comprising:
- a transparent substrate;
- a plurality of light emitting diodes (LEDs);
- a thin-film circuit layer comprising a plurality of transistors electrically coupled with the plurality of LEDs, wherein:
- the plurality of transistors are configured to control operation of the plurality of LEDs;
- and
- the thin-film circuit layer is bonded to the transparent substrate;
- and
- a backplane bonded to the transparent substrate, wherein:
- the backplane is electrically coupled with the thin-film circuit layer;
- and
- the backplane is on a same side of the transparent substrate as the thin-film circuit layer.
8 more elements
Dependencies are inferred from the claim text.