Semiconductor device and method of forming the same

A method of forming a semiconductor device, the method comprising:

• depositing a first conductive plate;
• disposing a first insulating plate over the first conductive plate and covering a sidewall of the first conductive plate;
• depositing a second conductive plate on the first insulating plate;
• depositing a second insulating plate on the second conductive plate;
• depositing a third conductive plate on the second insulating plate;
• depositing a fourth conductive plate on the second insulating plate adjacent to the third conductive plate;
• forming a first conductive via penetrating the third conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate, wherein the first conductive via is electrically coupled to the third conductive plate and the first conductive plate;
• and
• forming a second conductive via penetrating the fourth conductive plate, the second insulating plate, the second conductive plate, and the first insulating plate, wherein the second conductive via is electrically coupled to the fourth conductive plate and the second conductive plate.

A method of forming a semiconductor device, the method comprising:

• depositing a first conductive plate and a second conductive plate;
• depositing a first insulating plate on the first conductive plate and the second conductive plate;
• depositing a third conductive plate on the first insulating plate;
• depositing a second insulating plate on the third conductive plate;
• depositing a fourth conductive plate on the second insulating plate, the fourth conductive plate including an opening over the second insulating plate;
• forming a first conductive via penetrating the fourth conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate, wherein the first conductive via is electrically coupled to the fourth conductive plate and the first conductive plate;
• and
• forming a second conductive via through the opening and penetrating the second insulating plate, the third conductive plate, the first insulating plate, and the second conductive plate, wherein the second conductive via is electrically coupled to the third conductive plate and the second conductive plate.