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US 2020/0403103 A1Published application
High voltage diode on soi substrate with trench-modified current path
AssigneeSemiconductor Components Industries, LLC
InventorsJaroslav PJENCAK, Moshe AGAM, Johan Camiel Julia JANSSENS
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Abstract
A semiconductor device may include a Silicon on Insulator (SOI) substrate, and a diode formed on the SOI substrate, the diode including a cathode region and an anode region. The semiconductor device may include at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.
Claims20
A semiconductor device, comprising:
- a Silicon on Insulator (SOI) substrate;
- a diode formed on the SOI substrate, the diode including a cathode region and an anode region;
- and
- at least one breakdown voltage trench disposed at an edge of the cathode region, and between the cathode region and the anode region.
1 more element
A semiconductor device, comprising:
- a substrate;
- a diode formed in the substrate, the diode including a cathode region and an anode region;
- at least one trench insulator adjacent to the cathode region that defines a diode current path around the at least one trench insulator that traverses the substrate between the cathode region and the anode region.
A method of making a semiconductor device, comprising:
- forming a Silicon on Insulator (SOI) substrate;
- forming a breakdown voltage trench in the SOI substrate;
- forming a diode in the SOI, including forming a cathode region of the diode adjacent to the breakdown voltage trench, with the breakdown voltage trench between the cathode region and the anode region.
Dependencies are inferred from the claim text.