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US 2020/0403097 A1Published application
Method of forming isolation dielectrics for stacked field effect transistors (fets)
AssigneeSamsung Electronics Co., Ltd.
InventorsWei-E WANG, Mark RODDER, Vassilios GEROUSIS
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Abstract
A method of forming a stacked field effect transistor (FET) circuit is provided. The method includes providing a first wafer and a second wafer, forming a first dielectric layer on a surface of the first wafer, forming a second dielectric layer on a surface of the second wafer, and bonding the first wafer to the second wafer at the first dielectric layer and the second dielectric layer.
Claims26
A method of forming a stacked field effect transistor (FET) circuit, comprising:
- providing a first wafer and a second wafer;
- forming a first dielectric layer on a surface of the first wafer;
- forming a second dielectric layer on a surface of the second wafer;
- and
- bonding the first wafer to the second wafer at the first dielectric layer and the second dielectric layer.
2 more elements
A stacked field effect transistor (FET) circuit, comprising:
- a first wafer including a first dielectric layer formed on a surface of the first wafer;
- and
- a second wafer including a second dielectric layer formed on a surface of the second wafer,
- wherein the first wafer and the second wafer are bonded at the first dielectric layer and the second dielectric layer.
1 more element
Dependencies are inferred from the claim text.