Semiconductor device

A semiconductor device, comprising:

• a collector layer of a first conductive type;
• a drift layer of a second conductive type, disposed over the collector layer;
• an accumulation region of the second conductive type, disposed on the drift layer;
• a base region of the first conductive type, disposed on the accumulation region;
• a plurality of emitter regions of the second conductive type, disposed in a surface layer of the base region;
• a first gate insulating film;
• a first gate electrode in contact with the emitter regions via the first gate insulating film;
• a second gate insulating film;
• a second gate electrode facing the first gate electrode via the base region, and being in contact with the emitter regions via the second gate insulating film;
• a first resistive section having a first resistance, and being electrically connected to the first gate electrode;
• a second resistive section having a second resistance greater than the first resistance and electrically connected to the second gate electrode;
• and
• a gate electrode pad electrically connected to the first and second resistive sections.