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US 2020/0403082 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsFu-Jung Chuang, Tsuo-Wen Lu, Chia-Ming Kuo, Po-Jen Chuang, Chi-Mao Hsu
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate, forming a polymer block on a corner between the gate structure and the substrate, performing an oxidation process to form a first seal layer on sidewalls of the gate structure, and forming a source/drain region adjacent to two sides of the gate structure. Preferably, the polymer block includes fluorine, bromide, or silicon.
Claims14
A method for fabricating semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming a polymer block on a corner between the gate structure and the substrate, wherein the polymer block comprises fluorine, bromide, or silicon;
- performing an oxidation process to form a first seal layer on sidewalls of the gate structure;
- and
- forming a source/drain region adjacent to two sides of the gate structure.
2 more elements
A semiconductor device, comprising:
- a gate structure on a substrate;
- a first spacer on sidewalls of gate structure;
- a polymer block adjacent to the first spacer and on a corner between the gate structure and the substrate, wherein the polymer block comprises fluorine, bromide, or silicon;
- and
- a source/drain region adjacent to two sides of the first spacer.
2 more elements
Dependencies are inferred from the claim text.