Fabrication of gate all around device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Chih WANG, Yu-Chieh LIAO, Tai-I YANG, Hsin-Ping CHEN
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Abstract
A device includes a nanowire, a gate dielectric layer, a gate electrode, a gate pickup metal layer, and a gate contact. The nanowire extends in a direction perpendicular to a top surface of a substrate. The gate dielectric layer laterally surrounds the nanowire. The gate electrode laterally surrounds the gate dielectric layer. The gate pickup metal layer is in contact with a bottom surface of the gate electrode and extends laterally past opposite sidewalls of the gate electrode. The gate contact is in contact with the gate pickup metal layer.
Claims20
A device comprising:
- a nanowire extending in a direction perpendicular to a top surface of a substrate;
- a gate dielectric layer laterally surrounding the nanowire;
- a gate electrode laterally surrounding the gate dielectric layer;
- a gate pickup metal layer in contact with a bottom surface of the gate electrode and extending laterally past opposite sidewalls of the gate electrode;
- and
- a gate contact in contact with the gate pickup metal layer.
A device comprising:
- a source/drain pickup metal layer over a substrate;
- a nanowire over the source/drain pickup metal layer, the nanowire having a first source/drain region at a bottom portion of the nanowire, a second source/drain region at a top portion of the nanowire, and a sidewall laterally set back from a tapered sidewall of the source/drain pickup metal layer;
- a gate dielectric layer laterally surrounding the sidewall of the nanowire;
- a gate electrode laterally surrounding the gate dielectric layer;
- and
- a first source/drain contact in contact with the tapered sidewall of the source/drain pickup metal layer.
A device comprising:
- a source/drain pickup metal layer over a substrate;
- an etch stop layer covering a first region of a top surface of the source/drain pickup metal layer, while not covering a second region of the top surface of the source/drain pickup metal layer;
- a source/drain contact in contact with the second region of the top surface of the source/drain pickup metal layer;
- a nanowire extending upwardly from a third region of the top surface of the source/drain pickup metal layer through the etch stop layer;
- and
- a gate electrode laterally surrounding the nanowire.
Dependencies are inferred from the claim text.