Vertically stacked memory elements with air gap

A vertical memory structure comprising:

• a base of semiconductor material;
• first and second conductive lines each extending horizontally in a spaced apart fashion within a vertical stack above the base, the vertical stack including a plurality of conductive lines, the first and second conductive lines being part of the plurality;
• a gate structure extending vertically through at least the first and second conductive lines, the gate structure including a body of semiconductor material and a dielectric, wherein the dielectric is between the body and the first and second conductive lines;
• and
• a first insulating material layer on the gate structure between the first and second conductive lines, the first insulating material having a lateral width that is shorter than a lateral width of the first and second conductive lines;
• a second insulating material layer between the first and second conductive lines and adjacent the first insulating material layer;

A vertical memory structure comprising:

• a base of semiconductor material;
• first and second conductive lines each extending horizontally in a spaced apart fashion within a vertical stack above the base, the vertical stack including a plurality of conductive lines, the first and second conductive lines being part of the plurality;
• a gate structure extending vertically through at least the first and second conductive lines, the gate structure including a body of semiconductor material and a dielectric, wherein the dielectric is between the body and the first and second conductive lines;
• and
• an isolation material along sides of the vertical stack and in contact with the conductive lines, wherein the vertical stack defines a void between at least the first and second conductive lines in the vertical stack and laterally between the gate structure and the isolation material.