Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus

A light detecting device, comprising:

• a first section including:
• a first substrate layer at a light incident side of the first section, the first substrate layer including at least a photoelectric conversion region configured to output a pixel signal;
• and
• a first wiring layer at an opposite side of the light incident side of the first section, the first wiring layer including at least a pixel transistor;
• and
• a second section including:
• first and second regions separated by a separation region;
• the first region including:
• a second substrate layer including a logic portion configured to process a first signal based on the pixel signal, and a second wiring layer;
• and
• the second region including:
• a third substrate layer including a memory portion configured to store pixel data based on the first signal, and a third wiring layer,
• wherein the first and second sections are bonded together such that the first and second wiring layers face each other and the first and third wiring layers face each other, and
• wherein the first and second substrate layers are electrically connected through the first and second wiring layers and the first and third substrate layers are electrically connected through the first and third wiring layers.

A light detecting device, comprising:

• a first section including:
• a first substrate layer at a light incident side of the first section, the first substrate layer including at least a photoelectric conversion region configured to output a pixel signal;
• and
• a first wiring layer at an opposite side of the light incident side of the first section, the first wiring layer including at least a pixel transistor;
• and
• a second section including:
• a second substrate layer including first and second regions;
• the first region including a first logic portion configured to generate first pixel data based on the pixel signal;
• and
• the second region including a second logic portion configured to generate second pixel data based on the first pixel data;
• and
• a second wiring layer,
• wherein the first and second sections are bonded together such that the first and second wiring layers face each other, and
• wherein the first and second substrate layers are electrically connected through the first and second wiring layers.

A light detecting device, comprising:

• a first substrate including:
• a first substrate layer at a light incident side, the first substrate layer including a plurality of photodiodes;
• and
• a first wiring layer at an opposite side of the light incident side, the first wiring layer including a plurality of pixel transistors;
• a second substrate including a second wiring layer and a second substrate layer,
• wherein the first substrate and the second substrate are bonded together such that the first wiring layer and the second wiring layer are facing each other;
• and
• a third substrate including a third wiring layer and a third substrate layer,
• wherein the first substrate and the third substrate are bonded together such that the first wiring layer and the third wiring layer are facing each other,
• wherein the first wiring layer and the second wiring layer are electrically connected to one another and the first wiring layer and the third wiring layer are electrically connected to one another, and
• wherein a size of the second substrate and a size of the third substrate are each smaller than a size of the first substrate.