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US 2020/0403014 A1Published application
Image sensors and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYun Ki LEE, Minwook JUNG
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Abstract
An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.
Claims20
An image sensor comprising:
- a substrate including a plurality of pixel regions that include a first pixel region and a second pixel region;
- a plurality of photoelectric conversion parts including a first photoelectric conversion part disposed in the first pixel region and a second photoelectric conversion part disposed in the second pixel region;
- and
- a device isolation pattern disposed between the first pixel region and the second pixel region in the substrate,
- wherein a void is disposed in the device isolation pattern,
- wherein a width of an upper portion of the device isolation pattern is less than a width of an intermediate portion of the device isolation pattern, and
- wherein a width of a bottom portion of the device isolation pattern is less than the width of the intermediate portion of the device isolation pattern.
4 more elements
An image sensor comprising:
- a substrate including a plurality of pixel regions that include a first pixel region and a second pixel region;
- a plurality of photoelectric conversion parts including a first photoelectric conversion part disposed in the first pixel region and a second photoelectric conversion part disposed in the second pixel region;
- a device isolation pattern disposed between the first photoelectric conversion part and the second photoelectric conversion part in the substrate;
- and
- a grid pattern disposed on an upper surface of the substrate and vertically overlapping the device isolation pattern,
- wherein a vertically long shaped void is disposed in the device isolation pattern,
- wherein a vertical length of the void is greater than a horizontal width of the void, and
- wherein a width of the grid pattern is less than a maximum width of the device isolation pattern.
5 more elements
An image sensor comprising:
- a substrate including a plurality of pixel regions that include a first pixel region and a second pixel region;
- a plurality of photoelectric conversion parts including a first photoelectric conversion part disposed in the first pixel region and a second photoelectric conversion part disposed in the second pixel region;
- a device isolation pattern disposed between the first pixel region and the second pixel region in the substrate;
- a transfer gate disposed on a lower surface of the substrate;
- an interconnection structure disposed on the lower surface of the substrate and covering the transfer gate;
- and
- a grid pattern disposed on an upper surface of the substrate and vertically overlapping the device isolation pattern,
- wherein a vertically long shaped air-gap is disposed in the device isolation pattern,
- wherein a width of an upper portion of the device isolation pattern is less than a width of an intermediate portion of the device isolation pattern,
- wherein a width of a bottom portion of the device isolation pattern is less than the width of the intermediate portion of the device isolation pattern, and
- wherein a width of the grid pattern is less than a maximum width of the device isolation pattern.
8 more elements
Dependencies are inferred from the claim text.