Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a stacked body including:
• a first stacked portion including a plurality of first electrode layers stacked in a first direction via a first insulator,
• a second stacked portion including a plurality of second electrode layers stacked in the first direction via a second insulator and being disposed separately from the first stacked portion in the first direction, and
• a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion, and having a dielectric constant higher than a dielectric constant of the first and second insulators;
• a first semiconductor layer extending in the first stacked portion in the first direction;
• a first charge storage portion provided between the first semiconductor layer and one of the plurality of first electrode layers;
• a second semiconductor layer extending in the second stacked portion in the first direction;
• a second charge storage portion provided between the second semiconductor layer and one of the plurality of second electrode layers;
• and
• a third semiconductor layer extending in the connection portion and being in contact with the first semiconductor layer and the second semiconductor layer,
• the first, second, and third semiconductor layers respectively having a circular outer peripheral shape in a plane perpendicular to the first direction,
• a maximum diameter of the third semiconductor layer being larger than a diameter of a lower end of the second semiconductor layer.

A semiconductor device comprising:

• a stacked body including:
• a first stacked portion including a plurality of first electrode layers stacked in a. first direction via a first insulator,
• a second stacked portion including a plurality of second electrode layers stacked in the first direction via a second insulator and being disposed separately from the first stacked portion in the first direction, and
• a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion, and having a dielectric constant higher than a dielectric constant of the first and second insulators;
• and
• a column-shaped portion including:
• a first portion provided in the first stacked portion and extending in the first direction,
• a second portion provided in the second stacked portion and extending in the first direction, and
• an intermediate portion provided in the connection portion and connected the first portion to the second portion;
• the high dielectric layer including at least one selected from the group consisting of:
• a hafnium oxide, an aluminum oxide, a silicon carbonitride, a zirconium oxide.

A semiconductor device comprising:

• a stacked body including:
• a first stacked portion including a plurality of first electrode layers stacked in a first direction via a first insulator,
• a second stacked portion including a plurality of second electrode layers stacked in the first direction via a second insulator and being disposed separately from the first stacked portion in the first direction, and
• a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion, and having a dielectric constant higher than a dielectric constant of the first and second insulators;
• and
• a column-shaped portion including:
• a first portion provided in the first stacked portion and extending in the first direction,
• a second portion provided in the second stacked portion and extending in the first direction, and
• an intermediate portion provided in the connection portion and connected the first portion to the second portion;
• a thickness of the high dielectric layer being greater than a thickness of the first insulator and a thickness of the second insulator in the first direction.

A semiconductor device comprising:

• a stacked body including:
• a first electrode layer,
• a first insulator provided on the first electrode layer,
• a connection portion provided on the first insulator, the connection portion including a high dielectric layer having a dielectric constant higher than a dielectric constant of the first insulator, and
• a second electrode layer provided above the connection portion;
• first and second semiconductor layers provided adjacent to each other in the stacked body, and extending in a first direction through the first electrode layer, the first insulator, the connection portion, and the second electrode layer;
• a first charge storage portion provided between the first semiconductor layer and the first electrode layer;
• a second charge storage portion provided between the first semiconductor layer and the second electrode layer;
• a third charge storage portion provided between the second semiconductor layer and the first electrode layer;
• and
• a fourth charge storage portion provided between the second semiconductor layer and the second electrode layer,
• a shortest distance between the first and second semiconductor layers in a portion surrounded by the connection portion being shorter than a shortest distance between the first and second semiconductor layers in a portion surrounded by the first insulator.