Semiconductor device and manufacturing method of the same

A semiconductor device comprising:

• a channel structure arranged on a substrate and extending in a first direction perpendicular to a top surface of the substrate, the channel structure comprising a channel layer and a gate insulating layer;
• a plurality of insulating layers arranged on the substrate and surrounding the channel structure, the plurality of insulating layers spaced apart from each other in the first direction;
• a plurality of pairs of gate electrodes respectively arranged between adjacent insulating layers from among the plurality of insulating layers, each of the pairs of gate electrodes comprising a first gate electrode and a second gate electrode spaced apart from each other;
• and
• cover insulating layer structures surrounding the channel structure between the first gate electrode and the second gate electrode of each of the plurality of pairs of gate electrodes, the cover insulating layer structures covering edge portions of the plurality of pairs of gate electrodes.

A semiconductor device comprising:

• a channel structure arranged on a substrate and extending in a first direction perpendicular to a top surface of the substrate, the channel structure comprising a channel layer and a gate insulating layer;
• a plurality of insulating layers arranged on the substrate and surrounding the channel structure, the plurality of insulating layers spaced apart from each other in the first direction;
• a plurality of first gate electrodes surrounding the channel structure;
• and
• a plurality of second gate electrodes surrounding the channel structure,
• wherein between adjacent insulating layers from among the plurality of insulating layers are arranged a first gate electrode from among the plurality of first gate electrodes spaced apart along the first direction from a second gate electrode from among the plurality of second gate electrodes, and an air space between the first gate electrode and the second gate electrode.