Multi-junction led with eutectic bonding and method of manufacturing the same

A method of manufacturing a multi-junction LED using eutectic bonding comprising:

• forming a first light emitting structure having a first n-type semiconductor layer, a first active layer and a first p-type semiconductor layer on a substrate;
• sequentially forming a first tunnel junction layer, a common current spreading layer, and a second tunnel junction layer on the first light emitting structure;
• forming a second light emitting structure having a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer on the second tunnel junction layer;
• forming an insulating layer on the second light emitting structure;
• forming a metal bonding layer on the insulating layer;
• and
• stacking a third light emitting structure formed of a third p-type semiconductor layer, a third active layer, and a third n-type semiconductor layer on the metal bonding layer by using eutectic bonding.