US 2020/0402960 A1 · SEMICONDUCTOR STRUCTURE AND METHOD MANUFACTURING THE SAME

Abstract

A semiconductor structure includes a stacked structure. The stacked structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a first semiconductor substrate having a first active surface and a first back surface opposite to the first active surface. The second semiconductor die is over the first semiconductor die, and includes a second semiconductor substrate having a second active surface and a second back surface opposite to the second active surface. The second semiconductor die is bonded to the first semiconductor die through joining the second active surface to the first back surface at a first hybrid bonding interface along a vertical direction. Along a lateral direction, a first dimension of the first semiconductor die is greater than a second dimension of the second semiconductor die.

Claims20

Dependent claims

A semiconductor structure, comprising:

a stacked structure, comprising:
a first semiconductor die, comprising a first semiconductor substrate having a first active surface and a first back surface opposite to the first active surface;
and
a second semiconductor die, over the first semiconductor die, comprising a second semiconductor substrate having a second active surface and a second back surface opposite to the second active surface, and being bonded to the first semiconductor die through joining the second active surface to the first back surface at a first hybrid bonding interface along a vertical direction,
wherein along a lateral direction, a first dimension of the first semiconductor die is greater than a second dimension of the second semiconductor die.

2 more elements

A semiconductor structure, comprising:

a semiconductor device comprising:
a base tier, comprising a first die;
and
a die stack, bonded to the base tier, and comprising second dies arranged into at least one inner tier and an outmost tier, wherein the die stack and the base tier are bonded through a first hybrid bonding interface, the at least one inner tier and the outmost tier are bonded through a second hybrid bonding interface, and an offset is between a sidewall of the base tier and a sidewall of the die stack, wherein the first die and the second dies are electrically communicated to each other;
a plurality of conductive terminals, over and electrically connected to the semiconductor device;
and
a connection structure, located between the semiconductor device and the plurality of conductive terminals, wherein the base tier is located between the connection structure and the die stack, and the at least one inner tier is located between the base tier and the outmost tier.

4 more elements

A method of manufacturing a semiconductor structure, comprising:

forming at least one stacked structure, comprising:
providing a base tier comprising a first semiconductor die;
and
forming a die stack comprising second semiconductor dies on the base tier through hybrid bonding, wherein a first dimension of the base tier is greater than a second dimension of the die stack along a lateral direction, and the first semiconductor die is electrically connected to the second semiconductor dies;
forming a connection structure over the at least one stacked structure, the base tier being between the connection structure and the die stack;
and
disposing a plurality of conductive terminals over the at least one stacked structure and electrically connecting the plurality of conductive terminals to the first semiconductor die, the connection structure being between the plurality of conductive terminals and the base tier.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and method manufacturing the same

Life of this patent

Semiconductor structure and method manufacturing the same

Life of this patent

Abstract

Claims20