Semiconductor device
AssigneeMurata Manufacturing Co., Ltd.
InventorShingo YANAGIHARA
Life of this patent
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Abstract
A semiconductor device includes at least one transistor disposed on or in a substrate. The transistor is a bipolar transistor including an emitter, a base, and a collector, or a field-effect transistor including a source, a gate, and a drain. At least one first bump connected to the emitter or the source is disposed on the substrate. Furthermore, at least three second bumps connected to the collector or the drain are disposed on the substrate. In plan view, a geometric center of the at least one first bump is located inside a polygon whose vertices correspond to geometric centers of the at least three second bumps.
Claims11
A semiconductor device comprising:
- at least one transistor on or in a substrate;
- at least one first bump on the substrate and connected to an emitter or a source of the at least one transistor;
- and
- at least three second bumps on the substrate and connected to a collector or a drain of the at least one transistor,
- wherein as seen in a plan view of the substrate, a geometric center of the at least one first bump is within a polygon whose vertices are at geometric centers of the at least three second bumps.
A semiconductor device comprising:
- at least one transistor on or in a substrate;
- at least one first bump on the substrate and connected to an emitter or a source of the at least one transistor;
- and
- at least six second bumps on the substrate and connected to a collector or a drain of the at least one transistor,
- wherein as seen in a plan view of the substrate, a geometric center of the at least one first bump is within a first polygon whose vertices are at geometric centers of at least four of the second bumps, and is outside a second polygon whose vertices are at geometric centers of the at least six second bumps.
Dependencies are inferred from the claim text.