Semiconductor devices and semiconductor packages including the same

A semiconductor device comprising:

• an insulating layer;
• a conductive element in the insulating layer;
• a first barrier pattern in contact with a surface of the conductive element and a surface of the insulating layer;
• and
• a metal pattern on the first barrier pattern,
• wherein a thickness of the first barrier pattern ranges from 10 angstroms (Å) to 100 Å, and
• wherein the first barrier pattern comprises metal nitride.

A semiconductor package comprising:

• a board;
• and
• a first semiconductor package mounted on the board, the first semiconductor package comprising a re-distribution layer, a semiconductor chip on the re-distribution layer, and a terminal structure between the re-distribution layer and the board,
• wherein the re-distribution layer comprises an insulating layer and a conductive element in the insulating layer,
• wherein the terminal structure comprises:
• a first barrier pattern and a second barrier pattern that are sequentially stacked on a surface of the conductive element and a surface of the insulating layer;
• a metal pattern on the second barrier pattern;
• and
• a connection terminal between the metal pattern and the board,
• wherein a width of the second barrier pattern is smaller than a width of the first barrier pattern and a width of the metal pattern, and
• wherein the second barrier pattern comprises titanium.