Semiconductor devices

A method comprising:

• forming a first conductor pattern;
• forming at least two insulator patterns over the first conductor pattern;
• forming a second conductor pattern over the at least two insulator patterns;
• wherein a first insulator pattern of the at least two insulator patterns occupies at least one or more semiconductor channel regions to provide a dielectric between one or more semiconductor channels and one or more conductors of one of the first and second conductor patterns;
• and wherein the method comprises forming a second insulator pattern of the at least two insulator patterns after forming the first insulator pattern, wherein the second insulator pattern defines windows in at least the one or more semiconductor channel regions through which the second conductor pattern contacts the first insulator pattern other than via the second insulator pattern.

A device comprising a stack of layers defining one or more electronic elements, wherein the stack comprises at least:

• one or more semiconductor channels;
• a dielectric;
• a first conductor pattern defining one or more coupling conductors, wherein the one or more coupling conductors are capacitively coupled to the one or one or more semiconductor channels via the dielectric;
• a planarisation layer;
• a second conductor pattern defining one or more routing conductors, wherein the second conductor pattern is in contact with the first conductor pattern via through holes in at least the planarisation layer.