Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a first structure comprising:
• a first group of wafers comprising a plurality of first semiconductor dies embedded in a first photosensitive layer, wherein a plurality of first through vias are formed in the first photosensitive layer;
• and
• a first adhesive layer disposed between at least two of the first group of wafers;
• a second structure comprising:
• a second group of wafers comprising a plurality of second semiconductor dies embedded in a second photosensitive layer, wherein a plurality of second through vias are formed in the second photosensitive layer;
• and
• a second adhesive layer disposed between at least two of the second group of wafers;
• and
• a plurality of first metal bumps disposed between the first structure and the second structure, wherein the first structure is connected to the second structure with the first metal bumps.

A method for manufacturing a semiconductor device, comprising:

• preparing a first group of wafers having a plurality of first semiconductor dies embedded in a first photosensitive material layer;
• forming a plurality of first through vias in the first photosensitive material layer;
• attaching at least two of the first group of wafers using a first adhesive layer to form a first structure;
• preparing a second group of wafers having a plurality of second semiconductor dies embedded in a second photosensitive material layer;
• forming a plurality of second through vias in the second photosensitive material layer;
• attaching at least two of the second group of wafers using a second adhesive layer to form a second structure;
• and
• connecting the first structure to the second structure with a plurality of first metal bumps.