Plasma apparatus and methods of manufacturing semiconductor device using the same

A method of manufacturing a semiconductor device, comprising:

• etching a test wafer by applying an electrical field to a process gas to produce plasma in a process chamber;
• regulating the plasma by venting the process gas through a gas exhaust plate, the gas exhaust plate having a plurality of openings connected to a gas exhaust passage;
• preparing etched mapping data by measuring etched amounts of the test wafer;
• determining an error region in which an etching amount of the test wafer is outside of a reference value, the reference value being based on the etched mapping data;
• increasing or reducing an electrical conductivity of the electrical field, applied to the error region, by at least adjusting a size of an upper cross-section of at least one of an adjacent plurality of openings in a region adjacent to the error region, adjusting a size of an upper cross-section of the plurality of openings, and adjusting a size of an upper cross-section of a plurality of openings of a region connected to a sidewall of the process chamber;
• and
• changing an exhaust distribution of the process gas exhausted through the gas exhaust passage by adjusting a size of a lower cross-section of an adjacent opening.

A plasma processing device, comprising:

• a process chamber having a sidewall;
• an upper electrode in an upper portion of the process chamber;
• a lower electrode in a lower portion of the process chamber, the lower electrode having a mounting region on which to mount a wafer;
• a gas exhaust passage between the sidewall and the lower electrode, the gas exhaust passage configured to exhaust a process gas;
• and
• a gas exhaust plate encircling the lower electrode and having a plurality of openings connect to the gas exhaust passage, the gas exhaust plate configured to allow at least one region of a perimeter of the gas exhaust plate to be selectively in contact with the sidewall of the process chamber.