Self-aligned cut process for self-aligned via process window

A method for fabricating a semiconductor device, comprising:

• performing self-aligned patterning and etching on a base structure including at least one trench, including forming a first sacrificial layer and a first antireflective coating layer and forming at least one opening corresponding to the at least one trench through the first sacrificial layer and the first antireflective coating layer;
• forming at least one self-aligned via hole within the at least one opening, including removing the first antireflective coating layer;
• forming at least one sacrificial via within the at least one self-aligned via hole, including removing the first sacrificial layer and forming a second sacrificial layer within the at least one self-aligned via hole by filling the at least one trench with sacrificial material;
• forming a region having a misalignment relative to the at least one sacrificial via by cut patterning, including forming a second antireflective coating layer along the second sacrificial layer, forming a photoresist layer on the second antireflective coating layer, and forming the region within the photoresist layer to a surface of the second antireflective coating layer;
• and
• forming a cut cavity having a geometry for minimizing effects of the misalignment by protecting at least one self-aligned via due to the misalignment.

A semiconductor device, comprising:

• underlying devices;
• an interlayer dielectric disposed on the base structure including a cut structure landing region having a positive trench angle;
• conductive material disposed on the interlayer dielectric and the base structure, the conductive material including at least one self-aligned via;
• and
• a cut pillar misaligned on the cut structure landing region such that at least a top edge of the cut structure extends into the self-aligned via region.