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US 2020/0402844 A1Published application
Interconnects with gouged vias
AssigneeInternational Business Machines Corporation
InventorsKenneth Chun Kuen Cheng, Koichi Motoyama, Chih-Chao Yang, Hosadurga Shobha
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes depositing a spacer material in a trench arranged in a dielectric layer. An end of the trench extends to a metal layer of an interconnect structure. A portion of the spacer material in contact with the metal layer is removed. A recess is formed in the metal layer at the end of the trench.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- depositing a spacer material in a trench arranged in a dielectric layer, an end of the trench extending to a metal layer of an interconnect structure;
- removing a portion of the spacer material in contact with the metal layer;
- and
- forming a recess in the metal layer at the end of the trench, a portion of the metal layer directly beneath the spacer material being removed to form the recess;
- and
- removing remaining portions of the spacer material.
3 more elements
A method of fabricating a semiconductor device, the method comprising:
- depositing a spacer material in a trench arranged in a dielectric layer, an end of the trench extending to a metal layer of an interconnect structure;
- removing a portion of the spacer material in contact with the metal layer;
- forming a recess in the metal layer at the end of the trench, a portion of the metal layer directly beneath the spacer material being removed to form the recess;
- removing remaining portions of the spacer material;
- depositing a first metal in the recess to fill the recess in the metal layer;
- and
- depositing a second metal on the first metal to fill the trench.
4 more elements
(canceled)
A semiconductor device comprising:
- a trench arranged in a dielectric layer, an end of the trench extending to a metal layer of an interconnect structure;
- a spacer material arranged on a sidewall of trench;
- and
- a recess in the metal layer at the end of the trench, a portion of the metal layer directly beneath the spacer material being removed.
1 more element
Dependencies are inferred from the claim text.