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US 2020/0402843 A1Published application
Pattern forming method and imprint apparatus
AssigneeKioxia Corporation
InventorsAnupam MITRA, Tetsuro NAKASUGI, Kazuhiro TAKAHATA
Life of this patent
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Abstract
A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.
Claims3
A pattern forming method, comprising:
- dispensing an uncured first resist material on to a substrate in a first resist pattern, the first resist pattern including a first region in which uncured first resist material is provided a first amount, a second region in which uncured first resist material is provided in a second amount greater than the first amount, a third region in which uncured first resist material is not supplied, and a fourth region in which uncured first resist material is provided in at least the second amount, the third region being between the second and fourth regions, the first region being adjacent to the second region;
- curing the uncured first resist material with a first light to form a cured first resist pattern on the substrate;
- filling the third region of the first resist pattern with an uncured second resist material;
- curing the uncured second resist material in the third region to form a cured second resist pattern on the substrate;
- and
- performing an imprint lithography patterning on an upper surface of the cured second resist pattern.
3 more elements
A imprint lithography template, comprising:
- a first region with a first height;
- a second region adjacent to the first region and having a stair-stepped pattern from the first height to a second height less than the first height;
- a third region adjacent to the second region and including a pattern feature having the first height;
- and
- a fourth region adjacent to the third region having the second height.
2 more elements
Dependencies are inferred from the claim text.