Back to results
US 2020/0402837 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChing-Chih Chang, Yuan-Fu Ko, Chih-Sheng Chang
Life of this patent
Estimating the term…
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection in the first IMD layer; removing part of the first IMD layer; forming a spacer adjacent to the first metal interconnection; forming a second IMD layer on the spacer and the first metal interconnection; and forming a second metal interconnection in the second IMD layer and on the spacer and the first metal interconnection.
Claims17
A method for fabricating semiconductor device, comprising:
- forming a first inter-metal dielectric (IMD) layer on a substrate;
- forming a first metal interconnection in the first IMD layer;
- removing part of the first IMD layer;
- forming a spacer adjacent to the first metal interconnection;
- forming a second IMD layer on the spacer and the first metal interconnection;
- and
- forming a second metal interconnection in the second IMD layer and on the spacer and the first metal interconnection.
4 more elements
A semiconductor device, comprising:
- a first inter-metal dielectric (IMD) layer on a substrate;
- a first metal interconnection in the first IMD layer;
- a first spacer adjacent to one side of the first metal interconnection and on the first IMD layer;
- and
- a second metal interconnection on the first spacer and the first metal interconnection.
2 more elements
Dependencies are inferred from the claim text.