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US 2020/0402828 A1Published application
System and method for correcting non-ideal wafer topography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Mu Lin, Chi-Hung Liao, Yi-Ming Dai, Yueh Lin Yang
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Abstract
A scanner includes a light source configured to apply a light to a backside of a wafer. The light is reflected from the backside of the wafer. A first mirror is configured to receive the light from the backside of the wafer and reflect the light. A sensor is configured to receive the light from the first mirror and generate an output signal indicative of a backside topography of the wafer.
Claims20
A scanner comprising:
- a light source configured to apply a light to a surface of a wafer at a first incident angle with respect to a first horizontal axis;
- a first mirror positioned to receive light reflected from the surface of the wafer, wherein a change in the first incident angle of ΔΘ corresponds to a horizontal movement of the first mirror Δx on a second horizontal axis parallel to the first horizontal axis;
- and
- a sensor positioned to receive light reflected from the first mirror when the light source is applied to the surface of the wafer, wherein the sensor is configured to generate an output signal indicative of a surface topography of the wafer.
1 more element
A method, comprising:
- applying a light from a light source to a first portion of a surface of a wafer at a first incident angle;
- reflecting the light applied at the first incident angle from the surface of the wafer to a sensor;
- generating, by the sensor, a signal indicative of a surface topography of the wafer;
- and
- generating a corrected overlay map based on the signal indicative of the surface topography of the wafer.
2 more elements
A system, comprising:
- a scanner comprising:
- a light source configured to apply a light to a semiconductor wafer at a first incident angle with respect to a first horizontal axis;
- a first mirror positioned to receive light reflected from the semiconductor wafer when the light source is applied to the semiconductor wafer and reflect the light, wherein a change in the first incident angle of ΔΘ corresponds to a horizontal movement of the first mirror Δx on a second horizontal axis parallel to the first horizontal axis;
- and
- a sensor configured positioned to receive the light reflected from the first mirror when the light source is applied to the semiconductor wafer and generate an output signal indicative of a topography of the wafer;
- a wafer table configured to support the semiconductor wafer thereon;
- a processor configured to receive the output signal from the sensor and generate a corrected overlay map based on at least the output signal;
- and
- a semiconductor manufacturing system configured to form at least one layer of a semiconductor device on a semiconductor wafer coupled to the wafer table, wherein the corrected overlay map is configured to compensate for a topography of the semiconductor wafer.
6 more elements
Dependencies are inferred from the claim text.